GROWTH OF LEAD SULFIDE SINGLE-CRYSTALS BY BRIDGMAN METHOD

被引：4

作者：

GUTKNECHT, KH ^{[1
]}

PREIER, H ^{[1
]}

HESSE, J ^{[1
]}

机构：

[1] AEG TELEFUNKEN,FORSCH INST,FRANKFURT,FED REP GER

来源：

MATERIALS RESEARCH BULLETIN | 1975年 / 10卷 / 04期

关键词：

D O I：

10.1016/0025-5408(75)90113-0

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：277 / 280

页数：4

共 9 条

[1] MOBILITY OF ELECTRONS AND HOLES IN PBS, PBSE, AND PBTE BETWEEN ROOM TEMPERATURE AND 4.2-DEGREES-K [J].

ALLGAIER, RS ;

SCANLON, WW .

PHYSICAL REVIEW, 1958, 111 (04) :1029-1037

[2]

Bloem J., 1956, Z PHYS CHEM, V7, P1

[3] CHEMICAL ETCHES AND ETCH PIT PATTERNS ON PBS CRYSTALS [J].

BREBRICK, RF ;

SCANLON, WW .

JOURNAL OF CHEMICAL PHYSICS, 1957, 27 (03) :607-608

[4]

Harman T. C., 1973, J NONMETALS, V1, P183

[5] OXYGEN-FREE SINGLE CRYSTALS OF LEAD TELLURIDE, SELENIDE, AND SULFIDE [J].

LAWSON, WD .

JOURNAL OF APPLIED PHYSICS, 1952, 23 (04) :495-496

[6] A METHOD OF GROWING SINGLE CRYSTALS OF LEAD TELLURIDE AND LEAD SELENIDE [J].

LAWSON, WD .

JOURNAL OF APPLIED PHYSICS, 1951, 22 (12) :1444-1447

[7] LIFETIME OF CARRIERS IN LEAD SULFIDE CRYSTALS [J].

SCANLON, WW .

PHYSICAL REVIEW, 1957, 106 (04) :718-720

[8] VAPOR-PHASE GROWTH OF LEAD SULFIDE SINGLE-CRYSTALS [J].

SHORT, NR ;

HENRY, WG .

JOURNAL OF CRYSTAL GROWTH, 1973, 20 (01) :57-62

[9]

Strauss A. J., 1973, Journal of Electronic Materials, V2, P71, DOI 10.1007/BF02658104

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