AN INVESTIGATION ON THE CHARACTERISTICS OF PURE CSI CRYSTALS

被引：14

作者：

UTTS, BK

SPAGNO, SE

机构：

[1] Engelhard Corp., Solon, Ohio 44139

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 02期

关键词：

D O I：

10.1109/23.106605

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Over 20 small crystals of undoped CsI, referred to as CsI (Pure), have been grown and evaluated for optical and scintillation performance. Some of these crystals exhibit a single emission band while other crystals exhibit more than one emission band, occurring in the region from 300nm to 600nm. The emission spectra are compared. The gamma ray scintillation efficiency varies by about −0.6%/°C for crystals having only one emission band at 315nm from 25 to 120 C. The material is linear for gamma rays from 0.06 to 2.6 MeV. The stability of the heat induced emission band over a function of time is measured. CsI(Pure) scintillation performance is compared to NaI(T1), BaF2, Bi4Ge3O12, and CsF. Copyright © 1990 by The Institute of Electrical and Electronics Engineers, Inc.

引用

页码：134 / 138

页数：5

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[3]

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[4]

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