OFF-STATE GATE CURRENT IN N-CHANNEL MOSFETS WITH NITRIDED OXIDE GATE DIELECTRICS

被引：5

作者：

WU, AT

LEE, SW

MURALI, V

GARNER, M

机构：

[1] Intel Corporation, Santa Clara

来源：

IEEE ELECTRON DEVICE LETTERS | 1990年 / 11卷 / 11期

关键词：

D O I：

10.1109/55.63012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This paper reports for the first time on the off-state gate current (Ig) characteristics of n-channel MOSFET's using thin nitrided oxide (NO) gate dielectrics prepared by rapid thermal nitridation (RTN) at 1150°C for 10-300 s. The new phenomena observed in NO devices are the significant Ig at drain voltages as low as 4 V and Ig injection efficiency reaching 0.8, as compared to 8.5 V and 10−7 in SiO2 devices with gate dielectrics of the same thickness. Based on the drain bias and temperature dependence, it is proposed that Ig in MOSFET’s with heavily nitrided oxide gate dielectrics arises from hot-hole injection, and the enhancement of gate current injection is due to the lowering of valence-band barrier height for hole emission at the NO/Si interface. The enhanced gate current injection may cause accelerated device degradation in MOSFET’s. However, it also presents potential device applications such as EPROM erasure. © 1990 IEEE

引用

页码：499 / 501

页数：3

共 13 条

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