A PROPOSED METHOD FOR RAPID DETERMINATION OF DOPING PROFILES IN SEMICONDUCTOR LAYERS

被引:3
作者
LEENOV, D
STEWART, RG
机构
[1] Dept. of Elec. Engrg., Lehigh University, Bethlehem
来源
PROCEEDINGS OF THE INSTITUTE OF ELECTRICAL AND ELECTRONICS ENGINEERS | 1968年 / 56卷 / 11期
关键词
D O I
10.1109/PROC.1968.6815
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
A procedure is proposed for determining the impurity atom profile on one side of a p-n junction from harmonic generation measurements. The analysis indicates that a series of determinations can be made without detailed point-by-point calculations. The ultimate resolution of the method is discussed. Copyright © 1968 by The Institute of Electrical and Electronics Engineers, Inc.
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页码:2095 / &
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