POSITRON-ANNIHILATION IN ALPHA-HGI2

被引:5
作者
NICOLAU, YF
MOSER, P
CORBEL, C
机构
[1] CENS,DRF,SPH,F-91191 GIF SUR YVETTE,FRANCE
[2] CENS,INST NATL SCI & TECH NUCL,F-91191 GIF SUR YVETTE,FRANCE
关键词
D O I
10.1016/0168-9002(89)91352-1
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
引用
收藏
页码:167 / 171
页数:5
相关论文
共 42 条
[1]  
[Anonymous], 1983, POSITRON SOLID STATE
[2]   IMPROVED CRYSTALS OF MERCURIC IODIDE GROWN IN A HORIZONTAL FURNACE FROM VAPOR-PHASE USING TEMPERATURE OSCILLATION METHOD [J].
BEINGLASS, I ;
DISHON, G ;
HOLZER, A ;
SCHIEBER, M .
JOURNAL OF CRYSTAL GROWTH, 1977, 42 (DEC) :166-170
[3]   POSITRON ANNIHILATION IN SOLID AND MOLTEN ALKALI CHLORIDES [J].
BERTOLACCINI, M ;
DUPASQUI. .
PHYSICAL REVIEW B-SOLID STATE, 1970, 1 (07) :2896-+
[4]   POSITRON ANNIHILATION CENTERS IN NACL [J].
BRANDT, W ;
WAUNG, HF ;
LEVY, PW .
PHYSICAL REVIEW LETTERS, 1971, 26 (09) :496-&
[5]  
BRANDT W, 1984, APPL PHYS, V5, P1
[6]  
CORBEL C, 1985, ANN CHIM PARIS, V8, P733
[7]   TEMPERATURE-DEPENDENCE OF THE ANNIHILATION OF POSITRONS IN SI CONTAINING DIVACANCIES AND QUADRIVACANCIES [J].
DANNEFAER, S ;
KUPCA, S ;
HOGG, BG ;
KERR, DP .
PHYSICAL REVIEW B, 1980, 22 (12) :6135-6139
[8]   INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION [J].
DANNEFAER, S ;
HOGG, B ;
KERR, D .
PHYSICAL REVIEW B, 1984, 30 (06) :3355-3366
[9]   POSITRON-ANNIHILATION IN THERMALLY QUENCHED POTASSIUM-CHLORIDE [J].
DANNEFAER, S ;
DEAN, GW ;
HOGG, BG .
PHYSICAL REVIEW B, 1976, 13 (09) :3715-3723
[10]   A POSITRON STUDY OF PLASTIC-DEFORMATION OF SILICON [J].
DANNEFAER, S ;
FRUENSGAARD, N ;
KUPCA, S ;
HOGG, B ;
KERR, D .
CANADIAN JOURNAL OF PHYSICS, 1983, 61 (03) :451-459