RESONANT RAMAN-SCATTERING BY LONGITUDINAL-OPTICAL PHONONS IN ZN1-XMNXSE (X = 0, 0.03, 0.1) NEAR THE E0 GAP

被引:18
作者
LIMMER, W
LEIDERER, H
JAKOB, K
GEBHARDT, W
KAUSCHKE, W
CANTARERO, A
TRALLEROGINER, C
机构
[1] MAX PLANCK INST FESTKORPERFORSCH,W-7000 STUTTGART 80,GERMANY
[2] DRAGERWERK AG,GRUNDLAGENENTWICKLUNG ABT,W-2400 LUBECK,GERMANY
[3] UNIV VALENCIA,DEPT FIS APLICADA,E-46100 VALENCIA,SPAIN
[4] HAVANA UNIV,DEPT THEORET PHYS,HAVANA,CUBA
来源
PHYSICAL REVIEW B | 1990年 / 42卷 / 17期
关键词
D O I
10.1103/PhysRevB.42.11325
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The efficiency of resonant one- and two-LO-phonon Raman scattering in oriented cubic Zn1-xMnxSe single crystals with x=0,0.03,0.1 is studied for incident photon energies near the E0 fundamental band gap. Absolute values of the Raman scattering efficiency (RSE) are determined for several backscattering configurations by using a sample substitution method and by correcting the measured intensities with respect to absorption, reflection, and refraction. The experimental data for one-LO-phonon scattering via deformation-potential and Fröhlich electron-phonon interaction are quantitatively compared with model calculations for the absolute RSE, where bound and continuum exciton states are considered as intermediate electronic states. Near resonance, strong LO-phonon intensities are measured in backscattering configurations where scattering via the deformation-potential and Fröhlich interaction is forbidden according to the standard Raman selection rules. © 1990 The American Physical Society.
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收藏
页码:11325 / 11334
页数:10
相关论文
共 45 条
[1]   THEORETICAL-MODEL OF STRESS-INDUCED TRIPLY RESONANT RAMAN-SCATTERING [J].
ALEXANDROU, A ;
TRALLEROGINER, C ;
CANTARERO, A ;
CARDONA, M .
PHYSICAL REVIEW B, 1989, 40 (03) :1603-1610
[2]  
[Anonymous], 1966, SEMICONDUCTORS SEMIM
[3]   DIELECTRIC FUNCTIONS AND OPTICAL-PARAMETERS OF SI, GE, GAP, GAAS, GASB, INP, INAS, AND INSB FROM 1.5 TO 6.0 EV [J].
ASPNES, DE ;
STUDNA, AA .
PHYSICAL REVIEW B, 1983, 27 (02) :985-1009
[4]   THEORY OF 2ND-ORDER RESONANCE RAMAN-SCATTERING IN CASE OF STRONG EXCITONIC EFFECTS [J].
BECHSTEDT, F ;
HAUS, D .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 88 (01) :163-171
[5]   THEORY OF RESONANT RAMAN SCATTERING IN CRYSTALS - GENERALIZED BARE-EXCITON APPROACH [J].
BENDOW, B ;
BIRMAN, JL .
PHYSICAL REVIEW B-SOLID STATE, 1971, 4 (02) :569-&
[6]  
BENDOW B, 1978, SPRINGER TRACTS MODE, V82, P69
[7]   THEORY OF INFRARED AND RAMAN PROCESSES IN CRYSTALS - SELECTION RULES IN DIAMOND AND ZINCBLENDE [J].
BIRMAN, JL .
PHYSICAL REVIEW, 1963, 131 (04) :1489-+
[8]   DEPENDENCE OF ENERGY-GAP ON X AND T IN ZN1-XMNXSE - THE ROLE OF EXCHANGE INTERACTION [J].
BYLSMA, RB ;
BECKER, WM ;
KOSSUT, J ;
DEBSKA, U ;
YODERSHORT, D .
PHYSICAL REVIEW B, 1986, 33 (12) :8207-8215
[9]   ABSOLUTE RAMAN-SCATTERING EFFICIENCIES OF SOME ZINCBLENDE AND FLUORITE-TYPE MATERIALS [J].
CALLEJA, JM ;
VOGT, H ;
CARDONA, M .
PHILOSOPHICAL MAGAZINE A-PHYSICS OF CONDENSED MATTER STRUCTURE DEFECTS AND MECHANICAL PROPERTIES, 1982, 45 (02) :239-254
[10]   EXCITONS IN ONE-PHONON RESONANT RAMAN-SCATTERING - DEFORMATION-POTENTIAL INTERACTION [J].
CANTARERO, A ;
TRALLEROGINER, C ;
CARDONA, M .
PHYSICAL REVIEW B, 1989, 39 (12) :8388-8397