AXIAL CHANNELING OF BORON IONS INTO SILICON

Channeling boron implants were performed into (100) and (110) silicon substrates in the energy range 80-700 keV. The dose ranged between 3.5 x 10(11) and 1 x 10(15) atoms/cm2 . The axial channeling concentration profiles of implanted B+ were compared with that obtained for incidence along the random direction of the crystal and with that obtained by implantation in amorphous silicon. The electrical and chemical boron distributions were obtained by spreading resistance and secondary ion mass spectrometry measurements, respectively. The inelastic stopping power, S(e), was extracted from the experimental maximum ranges for the [100] and [110] axis. The energy dependence of the electronic stopping power is given by S(e) = KE(p) with p[100] = 0.469 +/- 0.010 and p[110] = 0.554 + 0.004. Simulations obtained by the MARLOWE code, using the Oen-Robinson impact parameter dependent formula, for the electronic energy loss reproduce quite well the experimental depth profiles.