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LUMINESCENCE FROM STRAINED SI1-XGEX/SI QUANTUM-WELLS GROWN BY SI MOLECULAR-BEAM EPITAXY

被引：33
作者：
FUKATSU, S
USAMI, N
SHIRAKI, Y
机构：
[1] Research Center for Advanced Science and Technology (RCAST), The University of Tokyo, Meguro-ku, Tokyo, 153
来源：
JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1993年 / 32卷 / 3B期
关键词：
STRAINED SI1-XGEX/SI QUANTUM WELLS; EXCITON; PHOTOLUMINESCENCE; ELECTROLUMINESCENCE; GE SEGREGATION; SEGREGANT-ASSISTED GROWTH;
D O I：
10.1143/JJAP.32.1502
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
Excitonic luminescence was observed from strained Si1-xGex/Si quantum wells (QWs) grown on Si(100), (111) and (110) substrates using Si molecular beam epitaxy (Si MBE). Influence of growth environment and quality of the crystal on the luminescence efficiency is described. Quantum confinement of excitons was clearly indicated by the characteristic energy shift of luminescence peak energy with decreasing well width. The emission peak of QWs was found to be shifted to higher energies due to Ge segregation-induced potential profile distortion. This energy shift was effectively removed by the adoption of the segregant-assisted growth (SAG) scheme using an Sb adlayer. Room temperature electroluminescence was observed from strained Si0.65Ge0.35/Si QWs grown on both (100) and (111) substrates.
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页码：1502 / 1507
页数：6
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