THEORY OF INFLUENCE OF HOT ELECTRON EFFECTS ON INSULATED GATE FIELD EFFECT TRANSISTORS

被引：15

作者：

NEUMARK, GF

机构：

来源：

SOLID-STATE ELECTRONICS | 1967年 / 10卷 / 03期

关键词：

D O I：

10.1016/0038-1101(67)90070-6

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：169 / &

共 12 条

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[7] ELECTRON AND HOLE MOBILITIES IN INVERSION LAYERS ON THERMALLY OXIDIZED SILICON SURFACES [J].

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[9] THE FIELD-DEPENDENCE OF CARRIER MOBILITY IN SILICON AND GERMANIUM [J].

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