HIGH-POWER, CW, DIFFRACTION-LIMITED, GAALAS LASER DIODE-ARRAY IN AN EXTERNAL TALBOT CAVITY

被引:50
作者
WAARTS, R
MEHUYS, D
NAM, D
WELCH, D
STREIFER, W
SCIFRES, D
机构
[1] Spectra Diode Laboratories, San Jose, CA 95134
关键词
D O I
10.1063/1.104830
中图分类号
O59 [应用物理学];
学科分类号
摘要
A 20-element linear array of single transverse mode semiconductor lasers is operated in an external Talbot cavity. A total cw output power of 250 mW in a diffraction-limited far field and 29% differential efficiency is obtained with a 50% output coupler. By decreasing the output mirror reflectivity to 20%, 900 mW cw in a 1.7 times diffraction-limited radiation pattern with an increased differential efficiency of 38% is obtained. The low fill factor of the array (1:12) acts as a spatial mode-selective filter resulting in strong mode discrimination.
引用
收藏
页码:2586 / 2588
页数:3
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