HOT PHOTOLUMINESCENCE IN BERYLLIUM-DOPED GALLIUM-ARSENIDE

被引：12

作者：

IMHOFF, EA

BELL, MI

FORMAN, RA

机构：

[1] NBS, Semiconductor Materials &, Processes Div, Gaithersburg, MD, USA, NBS, Semiconductor Materials & Processes Div, Gaithersburg, MD, USA

来源：

SOLID STATE COMMUNICATIONS | 1985年 / 54卷 / 10期

关键词：

D O I：

10.1016/0038-1098(85)91153-6

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

SEMICONDUCTING GALLIUM ARSENIDE

引用

页码：845 / 848

页数：4

共 11 条

[1] INCORPORATION AND CHARACTERIZATION OF ACCEPTORS IN EPITAXIAL GAAS [J].

ASHEN, DJ ;

DEAN, PJ ;

HURLE, DTJ ;

MULLIN, JB ;

WHITE, AM .

JOURNAL OF PHYSICS AND CHEMISTRY OF SOLIDS, 1975, 36 (10) :1041-1053

[2] INTERVALLEY-SCATTERING SELECTION RULES IN 3-V SEMICONDUCTORS [J].

BIRMAN, JL ;

LAX, M ;

LOUDON, R .

PHYSICAL REVIEW, 1966, 145 (02) :620-&

[3]

CARDONA M, 1969, SOLID STATE PHYSIC S, V11, P66

[4]

COMAS J, COMMUNICATION

[5]

IMHOFF EA, UNPUB

[6] MULTIPLE-PHONON RESONANT RAMAN SCATTERING IN CDS [J].

LEITE, RCC ;

SCOTT, JF ;

DAMEN, TC .

PHYSICAL REVIEW LETTERS, 1969, 22 (15) :780-&

[7] CASCADE THEORY OF INELASTIC SCATTERING OF LIGHT [J].

MARTIN, RM ;

VARMA, CM .

PHYSICAL REVIEW LETTERS, 1971, 26 (20) :1241-&

[8]

MIRLIN DN, 1980, JETP LETT+, V32, P31

[9] INTRA-VALENCE-BAND AND INTER-VALENCE-BAND ELECTRONIC RAMAN-SCATTERING IN HEAVILY DOPED P-GAAS [J].

OLEGO, D ;

CARDONA, M ;

ROSSLER, U .

PHYSICAL REVIEW B, 1980, 22 (04) :1905-1911

[10] INTRINSIC OSCILLATORY PHOTOCONDUCTIVITY AND BAND STRUCTURE OF GAAS [J].

SHAW, RW .

PHYSICAL REVIEW B, 1971, 3 (10) :3283-&

← 1 2 →