GROWTH AND PROPERTIES OF SEMI-INSULATING EPITAXIAL GAAS

被引：15

作者：

MATTES, BL

HOUNG, YM

PEARSON, GL

机构：

[1] STANFORD UNIV,CTR MAT RES,STANFORD,CA 94305

[2] STANFORD UNIV,ELECTR LABS,STANFORD,CA 94305

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY | 1975年 / 12卷 / 04期

关键词：

D O I：

10.1116/1.568690

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：869 / 875

页数：7

共 24 条

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[2] CHROMIUM-DOPED GALLIUM ARSENIDE OBTAINED BY LIQUID PHASE EPITAXY [J].

ANDRE, E ;

LEDUC, JM .

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[3] THE PREPARATION OF SEMI-INSULATING GALLIUM ARSENIDE BY CHROMIUM DOPING [J].

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[4]

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[5] PROPERTIES OF SEMI-INSULATING GAAS [J].

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HOLEMAN, BR ;

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[6] SOLUBILITY OF III-V COMPOUND SEMICONDUCTORS IN COLUMN-III LIQUIDS [J].

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[7]

HOWER PL, 1971, SEMICONDUCTORS SEM A, V7, P147

[8] LUMINESCENCE IN SILICON-DOPED GAAS GROWN BY LIQUID-PHASE EPITAXY [J].

KRESSEL, H ;

DUNSE, JU ;

NELSON, H ;

HAWRYLO, FZ .

JOURNAL OF APPLIED PHYSICS, 1968, 39 (04) :2006-&

[9] TEMPERATURE GRADIENT CELL FOR LIQUID-PHASE EPITAXIAL-GROWTH OF GAAS [J].

MATTES, BL ;

ROUTE, RK .

JOURNAL OF CRYSTAL GROWTH, 1972, 16 (03) :219-222

[10]

Milnes A. G., 1973, DEEP IMPURITIES SEMI, P226

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