MEMORY SWITCHING IN AMORPHOUS-SILICON DEVICES

被引：36

作者：

OWEN, AE ^{[1
]}

LECOMBER, PG ^{[1
]}

SPEAR, WE ^{[1
]}

HAJTO, J ^{[1
]}

机构：

[1] UNIV DUNDEE,CARNEGIE LAB PHYS,DUNDEE DD1 4HN,SCOTLAND

来源：

JOURNAL OF NON-CRYSTALLINE SOLIDS | 1983年 / 59-6卷 / DEC期

关键词：

D O I：

10.1016/0022-3093(83)90398-8

中图分类号：

TQ174 [陶瓷工业]; TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

引用

页码：1273 / 1280

页数：8

共 11 条

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[5]

Feldman C., 1970, Journal of Non-Crystalline Solids, V2, P82, DOI 10.1016/0022-3093(70)90123-7

[6]

GABRIEL MC, 1982, J NON-CRYST SOLIDS, V48, P297, DOI 10.1016/0022-3093(82)90167-3

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[8] THRESHOLD CHARACTERISTICS OF CHALCOGENIDE-GLASS MEMORY SWITCHES [J].

OWEN, AE ;

ROBERTSON, JM ;

MAIN, C .

JOURNAL OF NON-CRYSTALLINE SOLIDS, 1979, 32 (1-3) :29-52

[9] NEW AMORPHOUS-SILICON ELECTRICALLY PROGRAMMABLE NON-VOLATILE SWITCHING DEVICE [J].

OWEN, AE ;

LECOMBER, PG ;

SARRABAYROUSE, G ;

SPEAR, WE .

IEE PROCEEDINGS-I COMMUNICATIONS SPEECH AND VISION, 1982, 129 (02) :51-54

[10] ELECTRONIC CONDUCTION AND SWITCHING IN CHALCOGENIDE GLASSES [J].

OWEN, AE ;

ROBERTSO.JM .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1973, ED20 (02) :105-122

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