PROGRESS IN FERROELECTRIC MEMORY TECHNOLOGY

被引：49

作者：

GEIDEMAN, WA

机构：

[1] McDonnell Douglas Electronic Systems Company, Santa Ana, CA 92705, 1801 E. St. Andrew Place

来源：

IEEE TRANSACTIONS ON ULTRASONICS FERROELECTRICS AND FREQUENCY CONTROL | 1991年 / 38卷 / 06期

关键词：

D O I：

10.1109/58.108872

中图分类号：

O42 [声学];

学科分类号：

070206 ; 082403 ;

摘要：

The application of ferroelectric films to semiconductor memories is described. Nonvolatile memory using the polarization hysteresis of ferroelectric is described. Test results for a PZT films on GaAs substrate are presented.

引用

页码：704 / 711

页数：8