DIRECT MEASUREMENT OF GAP-STATE ABSORPTION IN HYDROGENATED AMORPHOUS-SILICON BY PHOTOTHERMAL DEFLECTION SPECTROSCOPY

被引：525

作者：

JACKSON, WB

AMER, NM

机构：

来源：

PHYSICAL REVIEW B | 1982年 / 25卷 / 08期

关键词：

D O I：

10.1103/PhysRevB.25.5559

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：5559 / 5562

页数：4

共 23 条

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