SILICON HOMOEPITAXY USING PHOTOCHEMICAL VAPOR-DEPOSITION - A REFLECTION HIGH-ENERGY ELECTRON-DIFFRACTION AND TRANSMISSION ELECTRON-MICROSCOPY STUDY

Defect characterization of epitaxial silicon films grown on Si(100) lightly boron-doped wafers by low temperature photochemical vapor deposition using ArF excimer laser decomposition of Si2H6 is discussed. The film morphology and crystallinity were investigated by defect etching-Nomarski optical microscopy, reflection high energy electron diffraction and transmission electron microscopy. The growth parameters such as laser power, Si2H6 partial pressure and substrate temperature were varied to study the dependence of crystallinity on these parameters. Single-crystal films with a very low defect density were obtained at 0.08-0.7 W laser power, 5-20 mTorr Si2H6 partial pressure and 250-350-degrees-C substrate temperature.