CHARGING EFFECTS IN QUANTUM DOTS IN A MAGNETIC-FIELD

被引：9

作者：

VANDERVAART, NC ^{[1
]}

VANSTEVENINCK, MPD ^{[1
]}

HARMANS, CJPM ^{[1
]}

FOXON, CT ^{[1
]}

机构：

[1] PHILIPS RES LABS,REDHILL RH1 5HA,SURREY,ENGLAND

来源：

PHYSICA B | 1994年 / 194卷

关键词：

D O I：

10.1016/0921-4526(94)90955-5

中图分类号：

O469 [凝聚态物理学];

学科分类号：

070205 ;

摘要：

We have studied charging effects in a lateral split-gate quantum dot defined by metal gates in the two dimensional electron gas of a AlGaAs-GaAs heterostructure. Conductance oscillations as a function of magnetic field occur in the integer quantum Hall effect regime. We have observed a superposition of oscillations with two different periods. The larger period is associated with the removal of one electron from the dot. The smaller period is related to the transfer of an electron from the second to the fist Landau level (LL). The measurements are interpreted in terms of a simple model which takes into account the charging energy between the LLs in the dot.

引用

页码：1251 / 1252

页数：2