POINT-DEFECTS IN GAAS STUDIED BY CORRELATED POSITRON LIFETIME, OPTICAL, AND ELECTRICAL MEASUREMENTS .1. NATIVE POINT-DEFECTS AND THEIR COMPLEXES IN AS-GROWN GAAS

被引：19

作者：

DLUBEK, G

DLUBEK, A

KRAUSE, R

BRUMMER, O

FRIEDLAND, K

RENTZSCH, R

机构：

[1] MARTIN LUTHER UNIV,SEKT PHYS,DDR-4020 HALLE,GER DEM REP

[2] ACAD SCI GDR,ZENT INST ELEKTR PHYS,DDR-1086 BERLIN,GER DEM REP

来源：

PHYSICA STATUS SOLIDI A-APPLIED RESEARCH | 1988年 / 106卷 / 02期

关键词：

D O I：

10.1002/pssa.2211060212

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

引用

页码：419 / 432

页数：14

共 56 条

[1] Baraff G. A., 1986, Materials Science Forum, V10-12, P293, DOI 10.4028/www.scientific.net/MSF.10-12.293
[2] RADIATIVE TRANSITIONS INDUCED IN GALLIUM-ARSENIDE BY MODEST HEAT-TREATMENT
BIREY, H
SITES, J
[J]. JOURNAL OF APPLIED PHYSICS, 1980, 51 (01) : 619 - 634
[3] SEMICONDUCTING AND OTHER MAJOR PROPERTIES OF GALLIUM-ARSENIDE
BLAKEMORE, JS
[J]. JOURNAL OF APPLIED PHYSICS, 1982, 53 (10) : R123 - R181
[4] BRANDT W, 1983, 1981 P INT SCH PHYS
[5] BRUMMER O, 1985, MICROCHEM ACTA WIE S, V11, P187
[6] BUBLIK VT, 1973, KRISTALLOGRAFIYA+, V18, P353
[7] POSITRON LIFETIMES IN GAAS
CHENG, LJ
KARINS, JP
CORBETT, JW
KIMERLING, LC
[J]. JOURNAL OF APPLIED PHYSICS, 1979, 50 (04) : 2962 - 2964
[8] OPTICAL AND ELECTRICAL EFFECTS OF HIGH-CONCENTRATIONS OF DEFECTS IN IRRADIATED CRYSTALLINE GALLIUM-ARSENIDE
COATES, R
MITCHELL, EWJ
[J]. ADVANCES IN PHYSICS, 1975, 24 (05) : 593 - 644
[9] INVESTIGATION OF DEFECTS IN GALLIUM-ARSENIDE USING POSITRON-ANNIHILATION
DANNEFAER, S
HOGG, B
KERR, D
[J]. PHYSICAL REVIEW B, 1984, 30 (06): : 3355 - 3366
[10] INFLUENCE OF DEFECTS AND TEMPERATURE ON ANNIHILATION OF POSITRONS IN NEUTRON-IRRADIATED SILICON
DANNEFAER, S
DEAN, GW
KERR, DP
HOGG, BG
[J]. PHYSICAL REVIEW B, 1976, 14 (07): : 2709 - 2714