THE EFFECT OF IONIZING-RADIATION ON SOL-GEL FERROELECTRIC PZT CAPACITORS

被引：73

作者：

BENEDETTO, JM ^{[1
]}

MOORE, RA ^{[1
]}

MCLEAN, FB ^{[1
]}

BRODY, PS ^{[1
]}

DEY, SK ^{[1
]}

机构：

[1] ARIZONA STATE UNIV,DEPT CHEM BIOL & MAT ENGN,TEMPE,AZ 85287

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 1990年 / 37卷 / 06期

关键词：

D O I：

10.1109/23.101181

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ferroelectric (FE) thin-film capacitors were irradiated to 100 Mrad(Si) with 10-keV x rays. Some of the FE hysteresis loops show distortion at 5 Mrad(Si). The type and degree of distortion is dependent upon the polarization state and/or the applied field during irradiation. Preliminary results indicate that a fraction of the radiation-induced damage can be removed simply by cycling the FE capacitor with a 20-Khz square wave. The amount of damage removed is dependent upon the radiation conditions. © 1990 IEEE

引用

页码：1713 / 1717

页数：5

共 6 条

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