MECHANISM OF PHOTORESIST RESOLUTION IMPROVEMENT BY PREEXPOSURE TREATMENT

被引：5

作者：

ASAUMI, S

NAKANE, H

机构：

[1] Tokyo Ohka Kogyo Company, Limited, Gotemba-shi, Shizuoka-ken 412

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1990年 / 137卷 / 08期

关键词：

Phenolic Resins--Dissolution - Surface Treatment--Chemical Reactions;

D O I：

10.1149/1.2086986

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

This paper discusses an insoluble layer which forms on the photoresist surface by pre-exposure treatment. From an analytical result of used developer for pre-exposure treatment, we have found that TBP-NQD triester (triester of trihy-droxybenzophenone with naphthoquinone-1,2-diazide-5-sulfonic acid) and high molecular weight portion of Novolak resin in the positive photoresist were insoluble in the developer. We presume that those components are forming insoluble layer on the photoresist surface. © 1990, The Electrochemical Society, Inc. All rights reserved.

引用

页码：2546 / 2549

页数：4