CHARACTERIZATION OF CVD-HYDROGENATED DIAMOND-LIKE THIN-FILMS ON SILICON BY EELS, RBS/CHANNELING AND NUCLEAR-REACTION ANALYSIS

被引：15

作者：

BRULEY, J

MADAKSON, P

LIU, JC

机构：

[1] IBM Research Division, Thomas J. Watson Research Center, Yorktown Heights, NY 10598

来源：

NUCLEAR INSTRUMENTS & METHODS IN PHYSICS RESEARCH SECTION B-BEAM INTERACTIONS WITH MATERIALS AND ATOMS | 1990年 / 45卷 / 1-4期

关键词：

D O I：

10.1016/0168-583X(90)90912-E

中图分类号：

TH7 [仪器、仪表];

学科分类号：

0804 ; 080401 ; 081102 ;

摘要：

Thin diamondlike films, deposited on (100) Si, have been examined by electron energy loss spectroscopy (EELS), Rutherford backscattering spectroscopy (RBS) and nuclear reaction analysis. Results indicate that films deposited at high partial pressures of H2, which have been found to be softer than those deposited at low partial pressures, have higher concentrations of oxygen but similar concentrations of hydrogen within their bulk. It is proposed that the oxygen is bound to the carbon matrix, thus modifying the extended sp2 network. Analysis of the substrate indicates a damaged region at the top surface of the Si. © 1990.

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页码：618 / 621

页数：4

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