TEMPERATURE-DEPENDENCE OF THE ELECTRON LANDE G-FACTOR IN GAAS

被引：111

作者：

OESTREICH, M

RUHLE, WW

机构：

[1] Max-Planck-Institut für Festkörperforschung, 70569 Stuttgart

来源：

PHYSICAL REVIEW LETTERS | 1995年 / 74卷 / 12期

关键词：

D O I：

10.1103/PhysRevLett.74.2315

中图分类号：

O4 [物理学];

学科分类号：

0702 ;

摘要：

The temperature dependent frequency of quantum beats of free electron Larmor precession in bulk GaAs yields the temperature variation from 5 to 200 K of the Landé g factor with high accuracy. The Landé g factor increases from -0.44 to -0.38 to -0.35 as the temperature increases from 5 to 100 to 150 K. The experimental results are in the opposite direction than prediction by kp theory manifesting the need for appreciable, temperature dependent corrections of this band model. © 1995 The American Physical Society.

引用

页码：2315 / 2318

页数：4

共 25 条

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