P+/N HIGH-EFFICIENCY SILICON SOLAR-CELLS

[1] RADIATION-INDUCED CHANGES IN SILICON PHOTOVOLTAIC CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3271 - +

[2] BARAONA CR, 1975, 11TH P IEEE PHOT SPE

[3] Haynos J., 1974, INT C PHOT POW GEN H, P487

[4] ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (01) : 8 - &

[5] LEDERHANDLER SR, 1955, P IRE, V43, P478

[6] Lindmayer J, 1973, COMSAT TECH REV, V3, P1

[7] MONKOWSKI J, 1976, SOLID STATE TECHNOL, V19, P38

[8] RAPPAPORT P, 1961, ACTA ELECTRON, V5, P364

[9] STACH J, 1976, SOLID STATE TECHNOL, V19, P60

[10] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132

[1] RADIATION-INDUCED CHANGES IN SILICON PHOTOVOLTAIC CELLS [J]. JOURNAL OF APPLIED PHYSICS, 1962, 33 (11) : 3271 - +

[2] BARAONA CR, 1975, 11TH P IEEE PHOT SPE

[3] Haynos J., 1974, INT C PHOT POW GEN H, P487

[4] ANALYSIS + CHARACTERIZATION OF P-N JUNCTION DIODE SWITCHING [J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1964, ED11 (01) : 8 - &

[5] LEDERHANDLER SR, 1955, P IRE, V43, P478

[6] Lindmayer J, 1973, COMSAT TECH REV, V3, P1

[7] MONKOWSKI J, 1976, SOLID STATE TECHNOL, V19, P38

[8] RAPPAPORT P, 1961, ACTA ELECTRON, V5, P364

[9] STACH J, 1976, SOLID STATE TECHNOL, V19, P60

[10] DETAILED ANALYSIS OF THIN PHOSPHORUS-DIFFUSED LAYERS IN PARA-TYPE SILICON [J]. SOLID-STATE ELECTRONICS, 1961, 2 (2-3) : 123 - 132