OPTICAL-ACTIVITY INDUCED IN BI4GE3O12 WAVE-GUIDES BY ION-IMPLANTATION

被引：12

作者：

MAHDAVI, SM

TOWNSEND, PD

机构：

[1] School of Mathematical and Physical Sciences, University of Sussex

来源：

ELECTRONICS LETTERS | 1990年 / 26卷 / 06期

关键词：

Dielectrics and dielectric devices; Ion implantation; Optical activity; Waveguides;

D O I：

10.1049/el:19900242

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

This letter reports data for ion implanted Bi4Ge3O12 in which the modified material becomes optically active. The optical rotary power, after implantation and annealing, increases from zero to some 90°/mm. The effect is attributed to an ion beam induced relaxation to a modified BiGeO phase. © 1990, The Institution of Electrical Engineers. All rights reserved.

引用

页码：371 / 373

页数：3

共 10 条

[1] A NEW APPROACH TO THE DETERMINATION OF PLANAR WAVE-GUIDE PROFILES BY MEANS OF A NONSTATIONARY MODE INDEX CALCULATION [J].