ANODIC NIOBIUM PENTOXIDE FILMS - GROWTH AND THICKNESS DETERMINATION BY INSITU OPTOELECTROCHEMICAL MEASUREMENTS

被引：11

作者：

JULIAO, JF

CHAGAS, JWR

CESAR, HL

DIAS, NL

DECKER, F

GOMES, UU

机构：

[1] UNICAMP,INST FIS,BR-13081 CAMPINAS,SP,BRAZIL

[2] UNIV FED RIO GRANDE NORTE,DEPT FIS,BR-59000 NATAL,RN,BRAZIL

来源：

ELECTROCHIMICA ACTA | 1991年 / 36卷 / 08期

关键词：

ANODIZATION; INTERFERENCE; INTERFACE INTERFEROMETRY; OXIDE;

D O I：

10.1016/0013-4686(91)80008-V

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Data on optical reflectance and anodization voltage, obtained during the galvanostatic anodization of metallic niobium foils in an H3PO4(1%) solution at room temperature were simultaneously recorded as a function of time, to determine the thickness of the Nb2O5 films formed. From these data, plots of film thickness vs anodization voltage were obtained. A linear relation was always observed and in all cases but one, an angular coefficient of 22 angstrom V-1 was verified.

引用

页码：1297 / 1300

页数：4

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