SCANNING TUNNELING MICROSCOPY IMAGE OF GESB2TE4 THIN-FILMS

被引：2

作者：

TOMINAGA, J

HARATANI, S

HANDA, T

YANAGIUCHI, K

机构：

[1] TDK Chikumagawa the 1st Technical Center, Saku, Nagano, 389-02

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1992年 / 31卷 / 6B期

关键词：

CHALCOGENIDE; STM; THIN FILM; GESB2TE4; OPTICAL DISK; PHASE CHANGE; WORK FUNCTION; XPS;

D O I：

10.1143/JJAP.31.L799

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

A scanning tunneling microscopy image of thin film sputtered by a GeSb2Te4 target was obtained in oil conditions. The phase change of the films was confirmed from STM images when the film$ were heated at 250-degrees-C for 2 and 4 minutes. The arrangement of the atoms constituting the surface of the films was inferred through the consideration of the topographic image height with each different work function of the atoms.

引用

页码：L799 / L802

页数：4

共 21 条

[1]

ADACHI H, 1991, HYOUMENKAGAKU, V12, P50

[2] ANOMALOUS VOLTAGE DEPENDENCE OF TUNNELLING MICROSCOPY IN WSE2 [J].