NON-DESTRUCTIVE DETERMINATION OF CR CONCENTRATION DISTRIBUTION IN CR DOPED SEMI-INSULATING GAAS SUBSTRATES

被引:9
作者
SHIMIZU, H
OHNO, H
HASEGAWA, H
机构
来源
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS | 1982年 / 21卷 / 12期
关键词
D O I
10.1143/JJAP.21.L786
中图分类号
O59 [应用物理学];
学科分类号
摘要
引用
收藏
页码:L786 / L788
页数:3
相关论文
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[5]  
JACOB G, 1981, I PHYS C SER, V56, P455
[6]  
SUGANO T, 1982, I PHYS C SER, V63, pCH11
[7]   EFFECT OF CR CONCENTRATION ON ELECTRICAL-PROPERTIES OF CR-DOPED SEMI-INSULATING GAAS SUBSTRATES [J].
UDAGAWA, T ;
NAKANISI, T .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1981, 20 (08) :L579-L582