RESONANT PHOTODIFFRACTIVE 4-WAVE MIXING IN SEMI-INSULATING GAAS/ALGAAS QUANTUM-WELLS

被引：34

作者：

GLASS, AM ^{[1
]}

NOLTE, DD ^{[1
]}

OLSON, DH ^{[1
]}

DORAN, GE ^{[1
]}

CHEMLA, DS ^{[1
]}

KNOX, WH ^{[1
]}

机构：

[1] AT&T BELL LABS,HOLMDEL,NJ 07733

来源：

OPTICS LETTERS | 1990年 / 15卷 / 05期

关键词：

D O I：

10.1364/OL.15.000264

中图分类号：

O43 [光学];

学科分类号：

070207 ; 0803 ;

摘要：

We have performed photodiffractive four-wave mixing in semi-insulating multiple GaAs/AlGaAs quantum wells at a wavelength of 0.83 μm. The quantum wells were made semi-insulating by proton implantation, which introduces defects that are available to trap and store charge during holographic recording. The experiments demonstrate how photodiffractive behavior using the large resonant nonlinearities of quantum-confined excitons yields highly sensitive material for optical image processing. When pump powers of 1 mW/cm2 are used, the measured sensitivity is 2 orders of magnitude greater than that of bulk, nonresonant photorefractive semiconductors. © 1990 Optical Society of America.

引用

页码：264 / 266

页数：3

共 7 条

[1] ROOM-TEMPERATURE EXCITONIC NONLINEAR ABSORPTION AND REFRACTION IN GAAS/ALGAAS MULTIPLE QUANTUM WELL STRUCTURES [J].