PRESSURE-DEPENDENT PHOTOLUMINESCENCE STUDY OF WURTZITE GAN

被引：100

作者：

SHAN, W ^{[1
]}

SCHMIDT, TJ ^{[1
]}

HAUENSTEIN, RJ ^{[1
]}

SONG, JJ ^{[1
]}

GOLDENBERG, B ^{[1
]}

机构：

[1] OKLAHOMA STATE UNIV,CTR LASER RES,STILLWATER,OK 74078

来源：

APPLIED PHYSICS LETTERS | 1995年 / 66卷 / 25期

关键词：

D O I：

10.1063/1.113774

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The results of low-temperature photoluminescence (PL) measurements on wurtzite GaN with applied pressure up to over 50 kbar were reported. The samples were single-crystal GaN epilayer films grown by metalorganic chemical vapor deposition (MOCVD) on sapphire substrates. The PL spectra of the MOCVD GaN samples were governed by strong, narrow, near band-edge emission structures corresponding to radiative decay of bound and free excitons and a broad emission band in the yellow band with the maxima around 2.25 eV. The pressure coefficients for the observed excitonic emission lines were determined to be 3.9 meV/kbar, which yielded a direct measure of the pressure coefficient of wurtzite GaN direct Γ band gap. The experimental value of the hydrostatic deformation potential of the band gap was also obtained from the results.

引用

页码：3492 / 3494

页数：3