OHM RESISTIVITY OF ELECTROLESS COPPER LAYERS AS A FUNCTION OF THEIR THICKNESSES

被引：15

作者：

RADOEVA, M ^{[1
]}

RADOEV, B ^{[1
]}

机构：

[1] UNIV SOFIA,DEPT PHYS CHEM,BU-1126 SOFIA,BULGARIA

来源：

JOURNAL OF MATERIALS SCIENCE | 1995年 / 30卷 / 09期

关键词：

D O I：

10.1007/BF01184563

中图分类号：

T [工业技术];

学科分类号：

08 [工学];

摘要：

The electric Ohm resistivity of electroless Cu depositions on dielectric substrates as a function of their thicknesses is studied. Substantial deviations (up to 10-20 times) from the standard resistivity (rho(infinity) = 1.7 mu Omega cm(-1)) below 0.5 mu m thicknesses are observed. The experimental data show for the entire region of thicknesses (d(infinity) similar to 0.07-5 mu m) a power function between the relative resistivity changes (Delta rho/rho(infinity)) and the inverse thickness of depositions (d(infinity))-(Delta rho/rho(infinity))similar to(1/d(infinity))(0.8). This empirical relation is discussed as an effect of the porous structure of the metallic layers deposited on the substrate. A scanning electron micrography was applied in order to visualize the morphology of the depositions. The micrographs clearly show the evolution of the deposition profile: starting from separate islands at the very beginning of the process, and gradually covering the entire area with continuous but porous metal layers.

引用

页码：2215 / 2219

页数：5

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