SECONDARY ION MASS-SPECTROMETRY CHARACTERIZATION OF D2O AND H-2 O-18 STEAM OXIDATION OF SILICON

被引：7

作者：

MIKKELSEN, JC

机构：

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1982年 / 11卷 / 03期

关键词：

D O I：

10.1007/BF02654688

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：541 / 558

页数：18

共 28 条

[1] HYDRIDES AND HYDROXYLS IN THIN SILICON DIOXIDE FILMS [J].

BECKMANN, KH ;

HARRICK, NJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (04) :614-&

[2] HYDROGEN PROFILES IN WATER-OXIDIZED SILICON [J].

BREED, DJ ;

DOREMUS, RH .

JOURNAL OF PHYSICAL CHEMISTRY, 1976, 80 (22) :2471-2473

[3] TRACER EVALUATION OF HYDROGEN IN STEAM-GROWN SIO2 FILMS [J].

BURKHARD.PJ .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1967, 114 (2P1) :196-&

[4] GENERAL RELATIONSHIP FOR THERMAL OXIDATION OF SILICON [J].

DEAL, BE ;

GROVE, AS .

JOURNAL OF APPLIED PHYSICS, 1965, 36 (12) :3770-&

[5] OXIDATION OF SILICON BY WATER AND OXYGEN AND DIFFUSION IN FUSED SILICA [J].

DOREMUS, RH .

JOURNAL OF PHYSICAL CHEMISTRY, 1976, 80 (16) :1773-1775

[6]

Doremus RH., 1969, REACT SOLID, P667

[7] IDENTIFICATION OF ELECTRON TRAPS IN THERMAL SILICON DIOXIDE FILMS [J].

HARTSTEIN, A ;

YOUNG, DR .

APPLIED PHYSICS LETTERS, 1981, 38 (08) :631-633

[8]

HARTWIG CM, 1976, J APPL PHYS, V47, P958

[9] PROTON AND SODIUM TRANSPORT IN SIO2 FILMS [J].

HOFSTEIN, SR .

IEEE TRANSACTIONS ON ELECTRON DEVICES, 1967, ED14 (11) :749-+

[10] WATER CONTAMINATION IN THERMAL OXIDE ON SILICON [J].

HOLMBERG, GL ;

KUPER, AB ;

MIRALDI, FD .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1970, 117 (05) :677-+

← 1 2 3 →