TAPERED ACTIVE STRIPE FOR 1.5-MU-M INGAASP/INP STRAINED MULTIPLE-QUANTUM-WELL LASERS WITH REDUCED BEAM DIVERGENCE

被引：58

作者：

DOUSSIERE, P

GARABEDIAN, P

GRAVER, C

DEROUIN, E

GAUMONTGOARIN, E

MICHAUD, G

MEILLEUR, R

机构：

[1] Alcatel Alsthom Recherche, 91460 Marcoussis, Route de Nozay

来源：

APPLIED PHYSICS LETTERS | 1994年 / 64卷 / 05期

关键词：

D O I：

10.1063/1.111096

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We propose and demonstrate the application of an intracavity horizontally tapered (in width) active stripe to adiabatically reduce the output beam divergence of a 1.48-mu m InGaAsP/InP strained quantum well laser. We achieve far-field full width at half-maximum divergences as low as 13 degrees together with 100 mW emitted power into stable single transverse mode and 400 mA driving current. Maximum coupling efficiency to lensed single mode fiber of 73% is obtained.

引用

页码：539 / 541

页数：3

共 4 条

[1] OVER 245-MW 1.3-MU-M BURIED RIDGE STRIPE LASER-DIODES ON NORMAL-SUBSTRATE FABRICATED BY THE REACTIVE ION-BEAM ETCHING TECHNIQUE [J].