VERY LOW-LOSS GALNAS/INP OPTICAL WAVE-GUIDES FOR THE 10.6 MU-M WAVELENGTH

被引：2

作者：

DELACOURT, D

PAPUCHON, M

DIFORTEPOISSON, MA

RAZEGHI, M

机构：

[1] Thompson-CSF, Orsay, Fr, Thompson-CSF, Orsay, Fr

来源：

ELECTRONICS LETTERS | 1987年 / 23卷 / 09期

关键词：

SEMICONDUCTING GALLIUM COMPOUNDS;

D O I：

10.1049/el:19870325

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Optical waveguides for the 10. 6 mu m wavelength have been fabricated using the MOCVD technique in the InP/GaInAs system. The indices of refraction of the relevant materials are determined using integrated-optic techniques. Then, high-optical-quality optical waveguides are reported with propagation losses as low as 0. 7 db/cm. These structures are the basis of more sophisticated electrically controlled devices for 10. 6 mu m.

引用

页码：451 / 453

页数：3

共 5 条

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