VERY LOW-LOSS GALNAS/INP OPTICAL WAVE-GUIDES FOR THE 10.6 MU-M WAVELENGTH

被引:2
作者
DELACOURT, D
PAPUCHON, M
DIFORTEPOISSON, MA
RAZEGHI, M
机构
[1] Thompson-CSF, Orsay, Fr, Thompson-CSF, Orsay, Fr
关键词
SEMICONDUCTING GALLIUM COMPOUNDS;
D O I
10.1049/el:19870325
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
Optical waveguides for the 10. 6 mu m wavelength have been fabricated using the MOCVD technique in the InP/GaInAs system. The indices of refraction of the relevant materials are determined using integrated-optic techniques. Then, high-optical-quality optical waveguides are reported with propagation losses as low as 0. 7 db/cm. These structures are the basis of more sophisticated electrically controlled devices for 10. 6 mu m.
引用
收藏
页码:451 / 453
页数:3
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