ZONE-MELTING OF INDIUM-PHOSPHIDE

被引：9

作者：

BACHMANN, KJ

CLARK, L

BUEHLER, E

MALM, DL

SHAY, JL

机构：

[1] BELL TEL LABS INC,MURRAY HILL,NJ 07974

[2] BELL TEL LABS INC,HOLMDEL,NJ 07733

来源：

JOURNAL OF ELECTRONIC MATERIALS | 1975年 / 4卷 / 04期

关键词：

D O I：

10.1007/BF02661170

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

页码：741 / 756

页数：16

共 25 条

[1] INDIUM-PHOSPHIDE .2. LIQUID EPITAXIAL-GROWTH [J].

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SMITH, FGH ;

WILLIAMS, EW .

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[2] PREPARATION OF CDSNP2/INP HETEROJUNCTIONS BY LIQUID-PHASE EPITAXY FROM SN-SOLUTION [J].

BACHMANN, KJ ;

BUEHLER, E ;

SHAY, JL ;

KAMMLOTT, GW .

JOURNAL OF ELECTRONIC MATERIALS, 1974, 3 (02) :451-473

[3] PHASE-EQUILIBRIA AND VAPOR-PRESSURES OF PURE PHOSPHORUS AND OF INDIUM-PHOSPHORUS SYSTEM AND THEIR IMPLICATIONS REGARDING CRYSTAL-GROWTH OF INP [J].

BACHMANN, KJ ;

BUEHLER, E .

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[4]

BACHMANN KJ, TO BE PUBLISHED

[5]

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[6]

BACHMANN KJ, 1973, J ELECTRON MATER, V3, P279

[7] GROWTH OF SILICON CRYSTALS FREE FROM DISLOCATIONS [J].

DASH, WC .

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[8] PREPARATION OF HIGH-RESISTIVITY SILICON BY VACUUM FLOAT ZONING [J].

DIGGES, TG ;

YAWS, CL .

JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1974, 121 (09) :1222-1227

[9]

FOLBERLH O, 1955, Z NATURF, V109, P615

[10]

Hess K, COMMUNICATION

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