BASE CURRENT OF I2L TRANSISTORS

被引：47

作者：

WULMS, HEJ ^{[1
]}

机构：

[1] PHILIPS RES LABS, EINDHOVEN, NETHERLANDS

来源：

IEEE JOURNAL OF SOLID-STATE CIRCUITS | 1977年 / 12卷 / 02期

关键词：

D O I：

10.1109/JSSC.1977.1050863

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

引用

收藏

页码：143 / 150

页数：8

相关论文

共 15 条

[1] MERGED-TRANSISTOR LOGIC (MTL) - LOW-COST BIPOLAR LOGIC CONCEPT
BERGER, HH
WIEDMANN, SK
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 340 - &
[2] INJECTION MODEL - STRUCTURE-ORIENTED MODEL FOR MERGED TRANSISTOR LOGIC (MTL)
BERGER, HH
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1974, SC 9 (05) : 218 - 227
[3] LOW-TEMPERATURE REDUCTION OF FAST SURFACE STATES ASSOCIATED WITH THERMALLY OXIDIZED SILICON
CASTRO, PL
DEAL, BE
[J]. JOURNAL OF THE ELECTROCHEMICAL SOCIETY, 1971, 118 (02) : 280 - +
[4] INVESTIGATION OF LATERAL TRANSISTORS - DC CHARACTERISTICS
CHOU, S
[J]. SOLID-STATE ELECTRONICS, 1971, 14 (09) : 811 - &
[5] FORWARD CURRENT-VOLTAGE AND SWITCHING CHARACTERISTICS OF P+-N-N+ (EPITAXIAL) DIODES
DUTTON, RW
WHITTIER, RJ
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1969, ED16 (05) : 458 - &
[6] GRAAFF HCD, 1976, SOLID STATE ELECTRON, V19, P809
[7] INTEGRATED INJECTION LOGIC - NEW APPROACH TO LSI
HART, K
SLOB, A
[J]. IEEE JOURNAL OF SOLID-STATE CIRCUITS, 1972, SC 7 (05) : 346 - &
[8] KENNEDY DP, 1962, IRE T ELECTRON DEV, VED9, P136
[9] DEVICE PHYSICS OF INTEGRATED INJECTION LOGIC
KLAASSEN, FM
[J]. IEEE TRANSACTIONS ON ELECTRON DEVICES, 1975, ED22 (03) : 145 - 152
[10] MERTENS R, 1976, JUN SUMM COURS I2L B