PASSIVATION OF BULK TRAPPING LEVELS IN CADMIUM TELLURIDE BY PROTON IMPLANTATION

被引:17
作者
BIGLARI, B
SAMIMI, M
HAGEALI, M
KOEBEL, JM
SIFFERT, P
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D O I
10.1063/1.343047
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O59 [应用物理学];
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页码:1112 / 1117
页数:6
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共 27 条
[1]   INFLUENCE OF HYDROGEN IMPLANTATION ON PROPERTIES OF N+P POLYCRYSTALLINE SILICON SOLAR-CELLS [J].
AMMOR, L ;
MARTINUZZI, S .
SOLID-STATE ELECTRONICS, 1986, 29 (01) :1-6
[2]   HYDROGEN PASSIVATION OF POINT-DEFECTS IN SILICON [J].
BENTON, JL ;
DOHERTY, CJ ;
FERRIS, SD ;
FLAMM, DL ;
KIMERLING, LC ;
LEAMY, HJ .
APPLIED PHYSICS LETTERS, 1980, 36 (08) :670-671
[3]  
Biglari B., 1984, Poly-Micro-Crystalline and Amorphous Semiconductors, P387
[4]   PASSIVATION OF HIGH-RESISTIVITY CADMIUM TELLURIDE BY HYDROGEN IMPLANTATION [J].
BIGLARI, B ;
SAMIMI, M ;
HAGEALI, M ;
SIFFERT, P .
APPLIED PHYSICS A-MATERIALS SCIENCE & PROCESSING, 1987, 43 (01) :47-52
[5]   EVOLUTION OF RESISTIVITY ALONG CL-COMPENSATED THM GROWN CADMIUM TELLURIDE CRYSTALS [J].
BIGLARI, B ;
SAMIMI, M ;
KOEBEL, JM ;
HAGEALI, M ;
SIFFERT, P .
PHYSICA STATUS SOLIDI A-APPLIED RESEARCH, 1987, 100 (02) :589-596
[6]   PROPERTIES OF NITROGEN ACCEPTOR IN CDTE - ENERGY-SPECTRUM AND INTERACTION WITH HYDROGEN [J].
BOUDOUKHA, A ;
LEGROS, R ;
SVOB, L ;
MARFAING, Y .
JOURNAL OF CRYSTAL GROWTH, 1985, 72 (1-2) :226-231
[7]   DONOR NEUTRALIZATION IN GAAS(SI) BY ATOMIC-HYDROGEN [J].
CHEVALLIER, J ;
DAUTREMONTSMITH, WC ;
TU, CW ;
PEARTON, SJ .
APPLIED PHYSICS LETTERS, 1985, 47 (02) :108-110
[8]  
ELKOMOSS SG, 1985, J APPL PHYS, V57, P5343
[9]  
ERMOLOVICH IB, 1986, SOV PHYS SEMICOND+, V20, P279
[10]  
EVSTIGNEEV AI, 1985, SOV PHYS SEMICOND+, V19, P562