STOICHIOMETRY AND MICROWAVE PROPERTIES OF YIG-FILMS GROWN BY ION-BEAM SPUTTERING

被引：3

作者：

CHEVRIER, F

ARTINIAN, M

LEGALL, H

机构：

[1] CNRS Laboratoire de Magnetisme et d’Optique des Solides

来源：

IEEE TRANSACTIONS ON MAGNETICS | 1990年 / 26卷 / 05期

关键词：

D O I：

10.1109/20.104416

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Thin films of ferromagnetic garnets such as YIG (Y3Fe5O12) are of considerable interest for microwave devices. We report on the epitaxial growth of garnet films by ion beam sputtering method with post deposition annealing. The variation of the magnitude of the ferromagnetic resonance linewith (H) with collector angles and annealing temperatures is demonstrated. © 1990 IEEE

引用

页码：1474 / 1476

页数：3