FORMATION OF SIO2 FILMS BY OXYGEN-ION BOMBARDMENT

被引：74

作者：

WATANABE, M

TOOI, A

机构：

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS | 1966年 / 5卷 / 08期

关键词：

D O I：

10.1143/JJAP.5.737

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

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页码：737 / &

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共 3 条

[1] INVESTIGATION OF THERMALLY OXIDISED SILICON SURFACES USING METAL-OXIDE-SEMICONDUCTOR STRUCTURES [J].

GROVE, AS ;

DEAL, BE ;

SNOW, EH ;

SAH, CT .

SOLID-STATE ELECTRONICS, 1965, 8 (02) :145-+

[2] INFRARED PROPERTIES OF SILICON MONOX AND EVAPORATED SIO FILMS [J].

HOWARTH, LE ;

SPITZER, WG .

JOURNAL OF THE AMERICAN CERAMIC SOCIETY, 1961, 44 (01) :26-28

[3]

1965, ASDTDR63316, V7