SINGLE-ELECTRON TRANSFER IN METALLIC NANOSTRUCTURES

被引：183

作者：

DEVORET, MH

ESTEVE, D

URBINA, C

机构：

[1] Service de Physique de I'Etat Condensé, CEA-Saclay

来源：

NATURE | 1992年 / 360卷 / 6404期

关键词：

D O I：

10.1038/360547a0

中图分类号：

O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];

学科分类号：

07 ; 0710 ; 09 ;

摘要：

Electrons can be made to pass through a circuit one by one, in nanoscale devices based on the combination of the Coulomb interaction between electrons and their passage by quantum tunnelling through an insulating barrier. Single-electron devices provide a new way of measuring the charge quantum, and clarify how electronic signal processing at the molecular level might function.

引用

页码：547 / 553

页数：7

共 51 条

[1]

Averin D. V., 1991, QUANTUM EFFECTS SMAL

[2] MACROSCOPIC QUANTUM TUNNELING OF THE ELECTRIC CHARGE IN SMALL TUNNEL-JUNCTIONS [J].