WAVE-GUIDING IN EPITAXIAL 3C-SILICON CARBIDE ON SILICON

被引：7

作者：

JACKSON, SM

REED, GT

REESON, KJ

机构：

[1] Department of Electrical & Electronic Engineering, University of Surrey

来源：

ELECTRONICS LETTERS | 1995年 / 31卷 / 17期

关键词：

SILICON CARBIDE; PLANAR WAVE-GUIDES; INTEGRATED OPTICS;

D O I：

10.1049/el:19950997

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Waveguiding in 3C-silicon carbide has been observed following ion implantation of oxygen. The losses have been measured at different stages of the anneal process.

引用

页码：1438 / 1439

页数：2

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