COMPENSATION DENSITIES AND ACCEPTOR BINDING-ENERGIES IN LIGHTLY-DOPED PARA-TYPE HGCDTE

被引：2

作者：

HOFFMAN, CA

BARTOLI, FJ

MEYER, JR

机构：

来源：

JOURNAL OF CRYSTAL GROWTH | 1985年 / 72卷 / 1-2期

关键词：

D O I：

10.1016/0022-0248(85)90188-5

中图分类号：

O7 [晶体学];

学科分类号：

0702 ; 070205 ; 0703 ; 080501 ;

摘要：

引用

页码：443 / 447

页数：5

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