AES and USXES investigations of the phase transformation in the surface layers of V-Si/SiO2/Si thin films structure stimulated by oxygen annealing

被引：1

作者：

Domashevskaya, EP

Yurakov, YA

Veligura, GA

Bocharov, SA

机构：

[1] Voronezh State University, 394693 Voronezh

来源：

关键词：

D O I：

10.1016/0368-2048(95)02477-8

中图分类号：

O433 [光谱学];

学科分类号：

0703 [化学]; 070302 [分析化学];

摘要：

Formation of surface SiO2 and slicides in thin film (V-Si)/SiO2/Si structures under thermal treatment in oxygen flow have been investigated.

引用

页码：511 / 516

页数：6

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