BORON-IMPLANTED PROFILES IN DIAMOND

被引：6

作者：

BLANCHARD, B

COMBASSON, JL

BOURGOIN, JC

机构：

[1] CEN GRENOBLE,SCAG EAPC,BP 85,38041 GRENOBLE,FRANCE

[2] CEN GRENOBLE,LETI ME 31,BP 85,38041 GRENOBLE,FRANCE

[3] UNIV PARIS 7,CNRS,ECOLE NORM SUPER,GRP PHYS SOLIDES,TOUR 23,2 PL JUSSIEU,PARIS 5,FRANCE

来源：

关键词：

D O I：

10.1063/1.88573

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：7 / 8

页数：2

共 19 条

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[2] ANALYSIS OF THIN SILICA FILMS BY SECONDARY ION EMISSION
BLANCHARD, B
HILLERET, N
MONNIER, J
[J]. MATERIALS RESEARCH BULLETIN, 1971, 6 (12) : 1283 - +
[3] BOURGOIN JC, 1975, DIAMOND RES, P24
[4] BROSIOUS PR, 1974, PHYS STATUS SOLIDI A, V21, P677, DOI 10.1002/pssa.2210210233
[5] Davidson L. A., 1971, Radiation Effects, V7, P35, DOI 10.1080/00337577108232562
[6] USE OF CHARACTERISTIC XRAYS TO MONITOR ANNEALING OF ION-IMPLANTED DIAMOND
DAVIDSON, LA
GIBBONS, JF
DER, RC
KAVANAGH, TM
KHAN, JM
[J]. APPLIED PHYSICS LETTERS, 1969, 14 (09) : 295 - &
[7] GALIN VV, 1970, SOV PHYS SEMICOND, V4, P709
[8] Konorova E. A., 1970, Crystal Lattice Defects, V1, P269
[9] LINDHARD J, 1963, MAT FYS MED DAN VID, V33
[10] LINDHARD J, 1968, MAT FYS MED DAN VID, V36