PHOSPHORUS DEPTH PROFILES IN THERMALLY OXIDIZED P-DOPED POLYSILICON

被引：10

作者：

CHANG, CC

SHENG, TT

SHANKOFF, TA

机构：

来源：

JOURNAL OF THE ELECTROCHEMICAL SOCIETY | 1983年 / 130卷 / 05期

关键词：

D O I：

10.1149/1.2119910

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

引用

页码：1168 / 1171

页数：4

共 13 条

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[4]

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NEAVE, JH .

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[7]

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[9]

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[10] HIGH-RESOLUTION AUGER SPUTTER PROFILING STUDY OF EFFECT OF PHOSPHORUS PILEUP ON SI-SIO2 INTERFACE MORPHOLOGY [J].

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