ANISOTROPY OF DEFECT INTRODUCTION BY ELECTRON-IRRADIATION IN COMPOUND SEMICONDUCTORS

被引：12

作者：

PONS, D

机构：

来源：

关键词：

D O I：

10.1063/1.333324

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

引用

页码：2839 / 2846

页数：8

共 18 条

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