GRATING-COUPLER-INDUCED INTERSUBBAND TRANSITIONS IN SEMICONDUCTOR MULTIPLE QUANTUM-WELLS

被引:13
作者
LI, WJ
MCCOMBE, BD
CHAMBERS, FA
DEVANE, GP
RALSTON, J
WICKS, G
机构
[1] SUNY BUFFALO, CTR ELECTR & ELECTROOPT MAT, BUFFALO, NY 14260 USA
[2] ARGONNE NATL LAB, ARGONNE, IL 60439 USA
[3] CORNELL UNIV, ITHACA, NY 14853 USA
关键词
D O I
10.1016/0039-6028(90)90282-D
中图分类号
O64 [物理化学(理论化学)、化学物理学];
学科分类号
070304 ; 081704 ;
摘要
Intersubband transitions induced in a simple Faraday transmission geometry by metallic grating couplers have been studied in several GaAs/Al0.3Ga0.7As MQW samples lightly doped with donors and with well widths between 210 Å and 320 Å. A sensitive pumping and probing technique was employed in which chopped visible pump light and spatially modulated infrared radiation are transmitted simultaneously through the MQW. The excess free electron density in the well created by < 100 microW/cm2 of red light is estimated to be ≅ 109cm-2 per well. The measured E1 - E0 energies are in good agreement with a simple ID model calculatio found that the grating coupling efficiency drops from 15% to 5% when the ratio of the transition wavelength to the grating period is increased from 1.5 to 3.6. © 1990.
引用
收藏
页码:164 / 167
页数:4
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