DETECTION OF ELECTRONIC PERTURBATIONS IN SILICON AFTER EC DECAY OF IN-111 OBSERVED BY PAC

被引:17
作者
DEICHER, M [1 ]
GRUBEL, G [1 ]
RECKNAGEL, E [1 ]
WICHERT, T [1 ]
FORKEL, D [1 ]
机构
[1] UNIV ERLANGEN NURNBERG,INST PHYS,D-8520 ERLANGEN,FED REP GER
关键词
Compendex;
D O I
10.1016/0168-583X(86)90555-0
中图分类号
TH7 [仪器、仪表];
学科分类号
0804 ; 080401 ; 081102 ;
摘要
SEMICONDUCTING SILICON
引用
收藏
页码:499 / 502
页数:4
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