NUMERICAL-CALCULATION OF EQUILIBRIUM CRITICAL THICKNESS IN STRAINED-LAYER EPITAXY

被引:11
作者
DOWNES, JR
DUNSTAN, DJ
FAUX, DA
机构
[1] Dept. of Phys., Surrey Univ., Guildford
关键词
D O I
10.1088/0268-1242/9/6/018
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
We calculate by numerical integration the energy of a strained layer in an infinite isotropic continuous elastic medium with and without a misfit dislocation dipole of pure edge character. The equilibrium critical thickness is the thickness at which these energies are the same. Solving for a range of values of misfit strain, we compare the results with some versions of the existing approximate models, and we are thereby able to indicate the best analytic expressions to use to predict equilibrium critical thickness.
引用
收藏
页码:1265 / 1267
页数:3
相关论文
共 7 条
[1]  
[Anonymous], 1982, THEORY DISLOCATIONS
[2]  
DOWNES JR, IN PRESS
[3]  
Fitzgerald E. A., 1991, Material Science Reports, V7, P87, DOI 10.1016/0920-2307(91)90006-9
[4]   THE DRIVING FORCE FOR GLIDE OF A THREADING DISLOCATION IN A STRAINED EPITAXIAL LAYER ON A SUBSTRATE [J].
FREUND, LB .
JOURNAL OF THE MECHANICS AND PHYSICS OF SOLIDS, 1990, 38 (05) :657-679
[5]   MISFIT DISLOCATIONS AND CRITICAL THICKNESS OF HETEROEPITAXY [J].
HU, SM .
JOURNAL OF APPLIED PHYSICS, 1991, 69 (11) :7901-7903
[6]   DEFECTS IN EPITAXIAL MULTILAYERS .1. MISFIT DISLOCATIONS [J].
MATTHEWS, JW ;
BLAKESLEE, AE .
JOURNAL OF CRYSTAL GROWTH, 1974, 27 (DEC) :118-125
[7]  
VANBEUREN HA, 1960, IMPERFECTIONS CRYSTA