ELECTRON HOPPING ENERGY INFLUENCE ON THE SPECIFIC-HEAT OF PHOSPHORUS-DOPED SILICON

被引:7
作者
DASILVA, AF [1 ]
FABBRI, M [1 ]
LIMA, ICD [1 ]
机构
[1] BROWN UNIV,DEPT PHYS,PROVIDENCE,RI 02912
来源
PHYSICA STATUS SOLIDI B-BASIC RESEARCH | 1983年 / 115卷 / 01期
关键词
D O I
10.1002/pssb.2221150137
中图分类号
O469 [凝聚态物理学];
学科分类号
070205 ;
摘要
引用
收藏
页码:311 / 316
页数:6
相关论文
共 16 条
[1]   ABSENCE OF DIFFUSION IN CERTAIN RANDOM LATTICES [J].
ANDERSON, PW .
PHYSICAL REVIEW, 1958, 109 (05) :1492-1505
[2]   HUBBARD MODEL FOR STRUCTURALLY RANDOM SYSTEM [J].
AOKI, H ;
KAMIMURA, H .
JOURNAL OF THE PHYSICAL SOCIETY OF JAPAN, 1976, 40 (01) :6-12
[3]   EXTRINSIC HEAT-CAPACITY IN METALLIC REGIME OF HEAVILY DOPED SILICON AND GERMANIUM [J].
BERGGREN, KF .
PHYSICAL REVIEW B, 1978, 17 (06) :2631-2639
[4]   GENERALIZED MATSUBARA-TOYOZAWA THEORY FOR THE SPECIFIC-HEAT IN HEAVILY-PHOSPHORUS-DOPED SILICON [J].
CHAO, KA ;
FERREIRADASILVA, A .
PHYSICAL REVIEW B, 1979, 19 (08) :4125-4129
[5]   DENSITY OF STATES OF IMPURITY BANDS IN SEMICONDUCTORS [J].
CHAO, KA ;
OLIVEIRA, FA ;
MAJLIS, N .
SOLID STATE COMMUNICATIONS, 1977, 21 (08) :845-848
[6]   MATRIX-ELEMENTS IN THE MATSUBARA-TOYOZAWA THEORY OF IMPURITY BAND [J].
CHAO, KA ;
DASILVA, AF .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1978, 90 (02) :K153-K155
[7]  
CHAO KA, 1978, INT J QUANTUM CHEM, V12, P461
[10]   SPECIFIC-HEAT STUDY OF HEAVILY P-DOPED SI [J].
KOBAYASHI, N ;
IKEHATA, S ;
KOBAYASHI, S ;
SASAKI, W .
SOLID STATE COMMUNICATIONS, 1977, 24 (01) :67-70