OBSERVATION OF GOLD SILICON ALLOY FORMATION IN THIN-FILMS BY HIGH-RESOLUTION ELECTRON-MICROSCOPY

被引:8
作者
ROBISON, W [1 ]
SHARMA, R [1 ]
EYRING, L [1 ]
机构
[1] ARIZONA STATE UNIV, DEPT CHEM, TEMPE, AZ 85287 USA
来源
ACTA METALLURGICA ET MATERIALIA | 1991年 / 39卷 / 02期
关键词
D O I
10.1016/0956-7151(91)90265-3
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films (< 30 nm) containing mixtures of gold and silicon were co-deposited on (100) surfaces of NaCl from the pure elements co-evaporated at equivalent molar rates. The resulting samples, believed to be homogenous distributions of the elements, were used to observed alloy formation during electron beam heating in an electron microscope. The formation of the alloy was shown to accompany the displacement and subsequent crystallization of excess silicon. The crystallographic data derived from the microscopic study were found to agree within experimental error with those reported from studies of bulk samples prepared by the rapid quenching of gold/silicon melts and assigned the composition Au2Si. Samples heated under intense electron beam irradiation resulted in the decomposition of the alloy and the formation of crystalline gold and silicon. Thicker samples (approximately 100 nm) were prepared by evaporation on (100) NaCl and subsequently heated at temperatures up to 250-degrees-C. These specimens by the "thin-film" X-ray diffraction technique confirmed the formation of Au2Si as well as its subsequent decomposition at temperatures above 100-degrees-C.
引用
收藏
页码:179 / 186
页数:8
相关论文
共 15 条
[1]   FORMATION OF NEW INTERMETALLIC PHASES IN BINARY EUTECTIC SYSTEMS BY DRASTIC UNDERCOOLING OF MELT [J].
ANANTHAR.TR ;
LUO, HL ;
KLEMENT, W .
NATURE, 1966, 210 (5040) :1040-&
[2]   EUTECTIC DECOMPOSITION IN GOLD-SILICON SYSTEM [J].
ANDERSEN, GA ;
BESTEL, JL ;
JOHNSON, AA ;
POST, B .
MATERIALS SCIENCE AND ENGINEERING, 1971, 7 (02) :83-&
[3]   LASER ANNEALING OF THE SI-AU INTERFACE [J].
CROS, A ;
MARFAING, J ;
SALVAN, F ;
DERRIEN, J ;
KERHERVE, F .
THIN SOLID FILMS, 1983, 100 (01) :17-24
[4]  
DICUPUA C, 1920, REND ACCAD NAZ LINEC, V29, P111
[5]   FORMATION, STRUCTURE, AND ORIENTATION OF GOLD SILICIDE ON GOLD SURFACES [J].
GREEN, AK ;
BAUER, E .
JOURNAL OF APPLIED PHYSICS, 1976, 47 (04) :1284-1291
[6]   FORMATION AND CRYSTALLIZATION OF AMORPHOUS SILICIDES AT THE INTERFACE BETWEEN THIN METAL AND AMORPHOUS-SILICON FILMS [J].
HERD, SR ;
AHN, KY ;
TU, KN .
THIN SOLID FILMS, 1983, 104 (1-2) :197-206
[7]   FORMATION OF SILICON OXIDE OVER GOLD LAYERS ON SILICON SUBSTRATES [J].
HIRAKI, A ;
MAYER, JW ;
LUGUJJO, E .
JOURNAL OF APPLIED PHYSICS, 1972, 43 (09) :3643-&
[8]  
LUO HL, 1965, T INDIAN I METALS, V18, P214
[9]   LEED-AES STUDY OF THE AU-SI(100) SYSTEM [J].
OURA, K ;
HANAWA, T .
SURFACE SCIENCE, 1979, 82 (01) :202-214
[10]  
PREDECKI O, 1965, T METALL SOC AIME, V233, P1438